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Series LED36Sr - Optically Immersed 3.6 µm LED
PLEASE NOTE: All IR LED specifications are subject to
change without notice. 
LEDs are fabricated from III-V heterostructures grown onto InAs
substrates. Optical immersion of lens with flip-chip devices enables three to
five fold increase of output power.
Features
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Low power consumptions (µW to mW range) |
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Angle of emittance <40° |
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Switching time: 10 ns (typical), 20 ns (max) |
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Narrow bandwidth: FWHM = 0.1 to 0.2
λmax |
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Wide operating temperature range |
Specifications (@T=22 °C)
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Peak wavelength, λ, µm: 3.6 ± 0.01
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Pulsed power at I=1 A, Ppulsed, µW: >
350±70 |
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CW power at I=200 mA, PCW, µW:
>135±25 |
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Switching time, ns: ≤20 |
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Thread: M5x0.5 |
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Emission size, mm: 3.3 diameter |
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Far-field pattern, FWHM, °: ≤20 |
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Operation (storage) conditions, °C: -25 to +60
(+80) |
LENS MATERIAL:
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LED36Sr: Si |
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LED36SrTO8TEC: Si lens and quartz window. |
Polarity:
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LED36Sr: short wire or black point is negative |
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LED36SrTO8TEC: see picture below. |
For more information please see the
datasheet.
PLEASE NOTE: All IR LED specifications are subject to
change without notice. Please contact us before ordering.
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LED36Sr