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LED42Sr & LED42SrTO8TEC

Series LED42Sr - Optically Immersed 4.2 µm LED

PLEASE NOTE: All IR LED specifications are subject to change without notice.

led package

LEDs are fabricated from III-V heterostructures grown onto InAs substrates. Optical immersion of lens with flip-chip devices enables three to five fold increase of output power.

Features

Low power consumptions (µW to mW range)

Angle of emittance <40°

Switching time: 10 ns (typical), 20 ns (max)

Narrow bandwidth: FWHM = 0.1 to 0.2 λmax

Wide operating temperature range


Specifications (@T=22 °C)

Peak wavelength, λ, µm: 4.15 ± 0.1

Pulsed power at I=1 A, Ppulsed, µW: > 70±15

CW power at I=200 mA, PCW, µW: >25±5

Switching time, ns: ≤20

Thread: M5x0.5

Emission size, mm: 3.3 diameter

Far-field pattern, FWHM, °: ≤20

Operation (storage) conditions, °C: -25 to +60 (+80)

Polarity: short wire or black point is negative

 

LENS MATERIAL:

LED42Sr: Si

LED42SrTO8TEC: Si lens and quartz window.

Polarity:

LED42Sr: short wire or black point is negative

LED42SrTO8TEC: see picture below.


For more information please see the datasheet.

PLEASE NOTE: All IR LED specifications are subject to change without notice. Please contact us before ordering.

Ordering Information

LED42Sr

 4.2 µm LED

For TE-cooled versions choose " TO8TEC" when ordering.

 Available accessories include driver electronics and detectors. Please contact us for more information.

Data Sheet

PLEASE NOTE: All IR LED specifications are subject to change without notice. Please contact us before ordering.

PDF LED42Sr data sheet - pdf (147K)

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