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LED55Sr & LED55SrTO8TEC

Series LED55Sr - Optically Immersed 5.5 µm LED

PLEASE NOTE: All IR LED specifications are subject to change without notice.

led package

LEDs are fabricated from III-V heterostructures grown onto InAs substrates. Optical immersion of lens with flip-chip devices enables three to five fold increase of output power.

Features

Low power consumptions (µW to mW range)

Angle of emittance <40°

Switching time: 10 ns (typical), 20 ns (max)

Narrow bandwidth: FWHM = 0.1 to 0.2 λmax

Wide operating temperature range


Specifications (@T=22 °C)

Peak wavelength, λmax, µm: 5.5 - 5.7

Pulsed power at I=1 A, Ppulsed, µW: 10±2

CW power at I=150 mA, PCW, µW: >2±0.5

Switching time, ns: ≤20

Thread: M5x0.5

Emission size, mm: 3.3 diameter

Far-field pattern, FWHM, °: ≤20

Operation (storage) conditions, °C: -25 to +60 (+80)

LENS MATERIAL:

LED55Sr: Si

LED55SrTO8TEC: Si lens and quartz window.

Polarity:

LED55Sr: short wire or black point is negative

LED55SrTO8TEC: see picture below.


For more information please see the datasheet.

PLEASE NOTE: All IR LED specifications are subject to change without notice. Please contact us before ordering.

Ordering Information

LED55Sr

 5.5 µm LED

For TE-cooled versions choose " TO8TEC" when ordering.

 Available accessories include driver electronics and detectors. Please contact us for more information.

Data Sheet

PLEASE NOTE: All IR LED specifications are subject to change without notice. Please contact us before ordering.

PDF LED55Sr data sheet - pdf (138K)

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