Contact Us Home Home

IR Source IR-SiX Series

Features

 The IR-Si Series are designed for those customers who require higher temperatures and greater output from their infrared source. These emitters are manufactured using a patented silicon nitride and silicon carbide material. The advanced ceramic technology ensures a very stable product. Their robust design ensures intrinsic physical and thermal strength.

 The IR-Si emitters can be supplied with parabolic reflectors for extremely efficient collimation of energy and complimented with windows for particular transmitting range, as well as with elliptical reflectors.

IR-SiXIR-SiX

 

Operating Specifications

IR-Si207

IR-Si217

IR-Si253

IR-Si272

IR-Si295

IR-Si311

Voltage, V

12.0

24.0

12.0

6.0

12.0

12.0

Temperature °C

1375

1385

1170

1160

1200

1025

Current, A

2.0

1.5

1.6

5.0

3.3

5.8

Power, W

24.0

37.0

20.0

30.0

40.0

70.0

Life, Hours at Typical V

5,000+

5,000+

5,000+

5,000+

5,000+

5,000+

Emissivity, %

80

80

80

80

80

80

Active Area, mm

3 (L) x 4.4 (W)

6 (W) x 4.4 (L)

2 (D) x 5 (L)

2.8 (D) x 5 (L)

3.5 (D) x 12 (L)

4.5 (D) x 17 (L)

Material

Silicon Carbide

Silicon Carbide

Silicon Nitride

Silicon Nitride

Silicon Nitride

Silicon Nitride

Standard Packaging

Type

Size

Reflector

Parabolic/Elliptical (to achieve opticla gain up to 14x)

0.5" (12.7 mm)

1" (25.4 mm)

2"(25.4 mm)

3" (76.2 mm)

Transmitting Range (microns)

Windows

Sapphire

CaF2

ZnSe

AR Silicon

0.17 - 5.0

0.15 - 9.0

0.55 - 20.0

1.2 -10.0

Ordering Information

IR-Si207

24.0 Watt IR Source - 1375 °C

 

IR-Si217

37.0 Watt IR Source - 1385 °C

 

IR-Si253

20.0 Watt IR Source - 1170 °C

 

IR-Si272

30.0 Watt IR Source - 1160 °C

 

IR-Si295

40.0 Watt IR Source - 1200 °C

 

IR-Si311

70.0 Watt IR Source - 1025 °C

 

Home | Products | Newsletter | Representatives | Contact | Website Policies
Scitec Instruments Ltd 1999 - 2009. All rights reserved.