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SiC UV Sensors

 

SiC Phtodiodes

 

NEW

If you require 1 piece or a few pieces of UV photodiode for research or testing purposes please check our Special Offers page for UV photodiodes we have in stock in the UK. Stock quantity available is shown. In many cases this is only a single piece. All items offered are at 50% of our usual list price to help us reduce our stock levels. When they're gone they're gone.

Features

UV-Photodiodes based on SiC (Silicon Carbide)

Extremely radiation hard

Very low dark current, low capacitance

Very fast, also available with filters

also for DVGW and Austrian O-Norm standard certified lamp control

SiC Photodiode Range:

UV Broadband Photodiodes

UVA Photodiodes

UVB Photodiodes

UVC Photodiodes

UV-Index Photodiodes

spectra

UV Broadband Photodiodes

SG01S-18 /UV Broadband

SiC UV Broadband Photodiode with TO18 hermetically sealed metal housing - 0.06 mm2 detector area. PTB tested high chip stability.

10mW/cm2 peak radiation results a current of approx. 780nA.

     

SG01S-18S /UV Broadband

SiC UV Broadband Photodiode with TO18 hermetically sealed metal housing, short carp- 0.06 mm2 detector area.

10mW/cm2 peak radiation results a current of approx. 400nA

     

SG01S-18ISO90/UV Broadband

SiC UV Broadband Photodiode with TO18 hermetically sealed metal housing, both pins isolated in a circle - 0.06 mm2 detector area.

10 mW/cm2 peak radiation results a current of approx. 400 nA

     

SG01S-5 /UV Broadband

SiC UV Broadband Photodiode with large TO5 hermetically sealed metal housing - 0.06 mm2 detector area.

10 mW/cm2 peak radiation results a current of approx. 400 nA

     

SG01M-18 /UV Broadband

SiC UV Broadband Photodiode with flat TO18 hermetically sealed metal housing - 0.2 mm2 detector area.

10 mW/cm2 peak radiation results a current of approx. 2600 nA

     

SG01M-18S /UV Broadband

SiC UV Broadband Photodiode with flat TO18 hermetically sealed metal housing, short cap - 0.2 mm2 detector area.

10 mW/cm2 peak radiation results a current of approx. 2000 nA

     

SG01M-18ISO90 /UV Broadband

SiC UV Broadband Photodiode with TO18 hermetically sealed metal housing, both pins isolated in a circle - 0.2 mm2 detector area.

10 mW/cm2 peak radiation results a current of approx. 2.6 μA

     

SG01M-5Lens /UV Broadband

SiC UV Broadband Photodiode with TO5 housing with concentrating lens (11 mm2 virtual detector area) - 0.2 mm2 detector area.

For very weak radiation. 10 μW/cm2 radiation at peak results a current of approx. 140 nA

     

SG01D-18 /UV Broadband

SiC UV Broadband Photodiode with TO18 hermetically sealed metal housing - 0.5 mm2 detector area. PTB tested high chip stability.

10 μ/cm2 peak radiation results a current of approx. 6.5 nA

     

SG01L-18 /UV Broadband

SiC UV Broadband Photodiode with TO18 hermetically sealed metal housing - 1.0 mm2 detector area.

10 μW/cm2 peak radiation results a current of approx. 12 nA

     

SG01L-18S /UV Broadband

SiC UV Broadband Photodiode with flat TO18 hermetically sealed metal housing, short cap- 1.0 mm2 detector area.

10 μW/cm2 peak radiation results a current of approx. 12 nA

     

SG01L-18ISO90 /UV Broadband

SiC UV Broadband Photodiode with TO18 hermetically sealed metal housing, two isolated pins in a circle- 1.0 mm2 detector area.

10 μW/cm2 peak radiation results a current of approx. 12 nA

     

SG01L-5 /UV Broadband

SiC UV Broadband Photodiode with TO5 hermetically sealed metal housing - 1.0 mm2 detector area.

10 μW/cm2 peak radiation results a current of approx. 12 nA

     

SG01XL-5 /UV Broadband

SiC UV Broadband Photodiode with TO5 hermetically sealed metal housing - 7.6 mm2 detector area.

10 μW/cm2 peak radiation results a current of approx. 99 nA

     

SG01XL-5ISO90 /UV Broadband

SiC UV Broadband Photodiode with TO5 hermetically sealed metal housing, two isolated pins in a circle - 7.6 mm2 detector area.

10 μW/cm2 peak radiation results a current of approx.99 nA

     

SG01M6H-18 /UV Broadband

UVA+UVB+UVC, 6H SiC chip, chip active area = 0.20 mm², TO18 housing

     

SG01M6H-5 /UV Broadband

UVA+UVB+UVC, 6H SiC chip, chip active area = 0.20 mm², TO5 short cap

     

SG01D-5Lens /UV Broadband

UVA+UVB+UVC, chip active area = 0.50 mm², TO5 lens cap

     

SG01L-5Lens/UV Broadband

UVA+UVB+UVC, chip active area = 1.00 mm², TO5 lens cap

     

SG01F-5ISO90 /UV Broadband

UVA+UVB+UVC, chip active area = 1.82 mm², TO5 short cap, isolated

     

SG01Q-5/UV Broadband

UVA+UVB+UVC, quadrant photodiode, chip active area = 4 x 1.4 mm², TO5 short cap

     

SG01XXL-8ISO90 /UV Broadband

UVA+UVB+UVC, chip active area = 36.00 mm², TO8 short cap, isolated

UVA Photodiodes

SG01S-A18

UVA-only sensitivity Photodiode with TO18 hermetically sealed metal housing - 0.06 mm2 active detector area. PTB tested high chip stability.

10 mW/cm2 radiation at 335nm results a current of approx. 360 nA.

     

SG01M-A18

UVA-only sensitivity Photodiode with TO18 hermetically sealed metal housing - 0.2 mm2 active detector area. PTB tested high chip stability.

10 μmW/cm2 radiation at 335 nm results a current of approx.1.2 nA

     

SG01M-A5

UVA-only sensitivity Photodiode with TO5 hermetically sealed metal housing - 0.2 mm2 active detector area.

10 mW/cm2 radiation at 335nm results a current of approx. 1.6 μA

     

SG01D-A18

UVA-only sensitivity Photodiode with TO18 hermetically sealed metal housing - 0.5 mm2 active detector area. PTB tested high chip stability.

10 μmW/cm2 radiation at 335 nm results a current of approx. 3 nA

     

SG01L-A5

UVA-only sensitivity Photodiode with TO5 hermetically sealed metal housing - 1.0 mm2 active detector area.

10 μW/cm2 radiation at 335nm results a current of approx. 7 nA

     

SG01L-A18

UVA-only sensitivity Photodiode with TO18 hermetically sealed metal housing - 1.0 mm2 active detector area. PTB tested high chip stability.

10 μmW/cm2 radiation at 335nm results a current of approx. 6 nA

     

SG01XL-A5

UVA-only sensitivity Photodiode with TO5 hermetically sealed metal housing - 4.0 mm2 active detector area.

1 μW/cm2 radiation at 335nm results a current of approx. 3 nA

UVB Photodiodes

SG01S-B18

UVB-only sensitivity Photodiode with TO18 hermetically sealed metal housing - 0.06 mm2 active detector area. PTB tested high chip stability.

10 mW/cm2 peak radiation results a current of approx. 750 nA

     

SG01M-B18

UVB-only sensitivity Photodiode with TO18 hermetically sealed metal housing - 0.2 mm2 active detector area. PTB tested high chip stability.

10 μW/cm2 radiation at peak results a current of approx. 1.2 nA

     

SG01M-B5

UVB-only sensitivity Photodiode with TO5 hermetically sealed metal housing - 0.2 mm2 active detector area.

10 mW/cm2 radiation at 280 nm results a current of approx. 2.3 μA

     

SG01D-B18

UVB-only sensitivity Photodiode with TO18 hermetically sealed metal housing - 0.5 mm2 active detector area. PTB tested high chip stability.

10 μW/cm2 radiation at peak results a current of approx. 2.9 nA

     

SG01L-B5

UVB-only sensitivity Photodiode with TO5 hermetically sealed metal housing - 1.0 mm2 active detector area.

10 μW/cm2 radiation at 280 nm results a current of approx. 10 nA

     

SG01L-B18

UVB-only sensitivity Photodiode with TO18 hermetically sealed metal housing - 1.0 mm2 active detector area. PTB tested high chip stability.

10 μW/cm2 radiation at peak results a current of approx. 5.8 nA

     

SG01XL-B5

UVB-only sensitivity Photodiode with TO5 hermetically sealed metal housing - 4.0 mm2 active detector area.

1 μW/cm2 radiation at 280 nm results a current of approx. 4 nA

UVC Photodiodes

SG01S-C18

UVC-only sensitivity Photodiode with TO18 hermetically sealed metal housing - 0.06 mm2 active detector area. PTB tested high chip stability.

10 mW/cm2 radiation at 254 nm results a current of approx. 315 nA

     

SG01S-C5

UVC-only sensitivity Photodiode with TO5 hermetically sealed metal housing - 0.06 mm2 active detector area.

10 mW/cm2 radiation at 254 nm results a current of approx. 210 nA

     

SG01M-C5

UVC-only sensitivity Photodiode with TO5 hermetically sealed metal housing - 0.2 mm2 active detector area.

10 mW/cm2 radiation at 254 nm results a current of approx. 1.5 μA

     

SG01D-C18

UVC-only sensitivity Photodiode with TO18 hermetically sealed metal housing - 0.5 mm2 active detector area. PTB tested high chip stability.

10 μW/cm2 radiation at 254 nm results a current of approx. 2.6 nA

     

SG01L-C5

UVC-only sensitivity Photodiode with TO5 hermetically sealed metal housing - 1.0 mm2 active detector area.

10 μW/cm2 radiation at 254 nm results a current of approx. 6.2 nA

     

SG01L-C18

UVC-only sensitivity Photodiode with TO18 hermetically sealed metal housing - 1.0 mm2 active detector area. PTB tested high chip stability.

10 μW/cm2 radiation at 254 nm results a current of approx. 5.2 nA

     

SG01XL-C5

UVC-only sensitivity Photodiode with TO5 hermetically sealed metal housing - 4.0 mm2 active detector area.

1 μW/cm2 radiation at 254 nm results a current of approx. 2.6 nA

UV-Index Photodiodes (Erythema)

DIN5050/ CIE087 UV-Index measurement with very small error <+/-3%

SG01M-E18

(eryca-customs)

UV-Index Photodiode with TO18 hermetically sealed housing

1 UVI (2,5 μW/cm2) ≈ 500 pA

0.2 mm2 detector area

     

SG01D-E18

(eryca-customs)

UV-Index Photodiode with TO18 hermetically sealed housing

1 UVI (2,5 μW/cm2) ≈ 1,25 nA

0.5 mm2 detector area

     

SG01L-E5

(eryca-advanced)

UV-Index Photodiode with TO5 housing

1 UVI (2,5 μW/cm2) ≈ 2 nA, cosine correction

1.00 mm2 detector area

     

SG01XL-E5

(eryca-science)

UV-Index Photodiode with TO5 housing

1 UVI (2,5 μW/cm2) ≈ 8 nA, cosine correction

4.00 mm2 detector area

Data Sheets

For help in choosing the correct product for your requirements please see our product overviews.

PDF UV sensor selection guide - pdf (616K)

Ordering information

Notice that not all the UV sensors are available for online ordering, if you can't find what you want then please email us at sales@scitec.uk.com and we will try to help.

 

 SiC UV photodiodes

 

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